Property-Tuning of Layered Structure Cu<sub>2</sub>ZnI<sub>4</sub> by Halogen Substitution

Hideaki Yamada; Ryoya Komatsu; Naoomi Yamada

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12p-N206-1~19] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Sep 12, 2021 1:00 PM - 6:15 PM N206 (Oral)

Mutsumi Sugiyama(Tokyo Univ. of Sci.), Katayama Tsukasa(Hokkaido Univ), Riena Jinno(Univ of Tokyo)

2:15 PM - 2:30 PM

△ [12p-N206-6] Property-Tuning of Layered Structure Cu₂ZnI₄ by Halogen Substitution

〇Hideaki Yamada¹, Ryoya Komatsu¹, Naoomi Yamada¹ (1.Chubu Univ.)

Keywords:multi component iodide, Cu2ZnI4, halogen substitution

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Presentation information

[12p-N206-1~19] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [12p-N206-6] Property-Tuning of Layered Structure Cu2ZnI4 by Halogen Substitution

△ [12p-N206-6] Property-Tuning of Layered Structure Cu₂ZnI₄ by Halogen Substitution