[12p-S302-1~17] 10.4 半導体スピントロニクス・超伝導・強相関

▼ [12p-S302-1] Temperature dependence of electron-spin polarization in InGaAs quantum dot opto-spintronic device applied with electric field

〇Soyoung Park¹、Satoshi Hiura¹、Hang Chen¹、Junichi Takayama¹、Kazuhisa Sueoka¹、Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

キーワード：quantum dot, electric field effect, electron-spin polarization

Ⅲ-Ⅴcompound semiconductor quantum dots (QDs) have been expected as an optically active layer of opto-spintronics devices due to the suppressed carrier spin relaxation by their strong quantum confinements. We have demonstrated an electric field control of spin polarity in opto-spintronic devices using InGaAs QDs tunnel-coupled with a quantum well (QW). In this study, we have focused on the temperature dependence of electron-spin polarization in InGaAs QD/QW tunnel-coupled nanostructures by applying an external bias voltage along the growth direction.