[13a-N305-1~10] 13.7 化合物及びパワーデバイス・プロセス技術・評価

▼ [13a-N305-4] Interface-charge-engineered normally-off AlTiO/AlGaN/GaN field-effect transistors

〇(D)Duong Dai Nguyen¹、Takehiro Isoda¹、Yuchen Deng¹、Toshi-kazu Suzuki¹ (1.Jap. Adv. Inst. of Sci. and Tech.)

キーワード：AlGaN/GaN, interface charge engineering, AlTiO

Towards normally-off operations in AlGaN/GaN-based metal-insulator-semiconductor field-effect transistors (MIS-FETs), "interface charge engineering" is a key technology. Although a positive fixed charge is often generated at the interface between an insulator and a negatively polarized AlGaN, neutralizing the AlGaN polarization charge, suppression of such an interface fixed charge enables the threshold voltage to be more positive. In this report, we show normally-off AlTiO/AlGaN/GaN MIS-FETs with favorable performances, based on the interface charge engineering using AlTiO (an alloy of Al₂O₃ and TiO₂) and partial gate recess with a rather thick remaining AlGaN layer.