[13a-S302-1~11] 10.1 新物質・新機能創成（作製・評価技術）

▲ [13a-S302-11] Anomalous Hall effect in Co₂MnAl thin films grown on MgO and MgAl₂O₄ substrates

〇Osamu Ishidoya¹、Michihiko Yamanouchi¹、Tetsuya Uemura¹ (1.IST Hokkaido Univ.)

キーワード：spintronics, Anomalous Hall effect, Co2MnAl

Cobalt-based Heusler alloy Co₂MnAl (CMA) is theoretically predicted to be a magnetic Weyl semimetal with a large intrinsic anomalous Hall effect (AHE) and large anomalous Hall angle (θ_AHE) of 20% was observed in L2₁-ordered CMA bulk, which is promising for a spin source of spin-orbit torque MRAM as well as magnetic sensors. The purpose of this study is to clarify θ_AHE of CMA thin films grown on an MgO substrate and an MgAl₂O₄ (MAO) substrate at various growth temperatures. We experimentally found that the values of θ_AHE for the CMA grown on the MAO substrate were slightly larger than those for the CMA grown on the MgO substrate, probably due to a smaller lattice mismatch between CMA and MAO. Moreover, θ_AHE for the CMA on the MAO substrate increased by 20% with increasing T_g from 400℃ to 600℃.