[13p-S302-1~15] 10.1 新物質・新機能創成（作製・評価技術）

▼ [13p-S302-4] Morphology and Magneto-Transport Properties of Mn₃Sn Films Deposited on High-Temperature Si/SiO₂ Substrates Without Post-annealing

〇Takumi Matsuo¹、Tomoya Higo^1,2、Satoru Nakatsuji^1,2,3,4 (1.Univ. of Tokyo、2.JST-CREST、3.Trans-Quantum Sci. Inst.、4.Johns Hopkins U.)

キーワード：Topological material, Antiferromagnet, Anomalous Hall effect

The Weyl antiferromagnet Mn₃Sn has been a popular target of research in recent years, and thin films of the material has garnered attention due to its potential applications in spintronics. In this work, the surface morphology of Mn₃Sn thin films fabricated on heated Si/SiO2 substrates without any post-annealing was investigated through AFM measurements and compared with that of post-annealed films. Electrically isolated grains of submicron sizes were observed for films thinner than 20 nm. Hall measurements show that these submicron structures exhibit topological properties characteristic of Mn₃Sn.