5:30 PM - 5:45 PM
[18p-Z05-15] Reaction mechanisms at 4H-SiC/SiO2 interface by the coexistence of dry and wet oxidants
〇Tsunashi Shimizu1, Toru Akiyama1, Tomonori Ito1, Hiroyuki Kageshima2, Masashi Uematsu3, Kenji Shiraishi4 (1.Mie Univ., 2.Shimane Univ., 3.Keio Univ., 4.Nagoya Univ.)