[19a-Z27-1~9] 15.4 III-V-group nitride crystals

Fri. Mar 19, 2021 9:00 AM - 11:30 AM Z27 (Z27)

Ryota Ishii(Kyoto Univ.), Shugo Nitta(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [19a-Z27-1] High temperature initial Growth of the AlN grown on low temperature AlN-Buffer layer

〇Reiya Aono¹, Shota Tsuda¹, Yuuya Ageta¹, Takumi Miyagawa¹, Hideki Hirayama^2,3, Yuusuke Takashima¹, Yoshiki Naoi^1,2, Kentaro Nagamatsu^1,2 (1.Tokushima Univ., 2.Tokushima Univ. pLED, 3.RIKEN)

9:15 AM - 9:30 AM

[19a-Z27-2] Improvement of crystalline quality of AlN template through very tiny pits

〇Ryo Okuno¹, Ryouta Hidaka², Takahiro Saitou², Narihito Okada², Norihito Maeda³, Msa Jou³, Hideki Hirayama³, Sou Kurai², Youichi Yamada², Kazuyuki Tadatomo² (1.Yamaguchi Univ., 2.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ, 3.RIKEN)

9:30 AM - 9:45 AM

[19a-Z27-3] Relationship between crystal orientation rotated domain and v-pit formation during GaN growth on Si substrates

〇Kazuya Okamoto¹, Momoko Deura¹, Takashi Yoda^2,4, Hideshi Takahashi², Kiyotaka Miyano², Masayuki Tsukui², Takeshi Momose¹, Masakazu Sugiyama^1,3, Yukihiro Shimogaki¹ (1.School Eng.,The Univ. Tokyo, 2.NuFlare Technology, 3.RCAST,The Univ. Tokyo, 4.FIRST, Tokyo Tech.)

9:45 AM - 10:00 AM

△ [19a-Z27-4] Void design for stress relaxation in nitride semiconductor films on Si substrates

〇Tomonori Oku¹, Takeshi Momose¹, Yukihiro Shimogaki¹, Momoko Deura¹ (1.The univ. of Tokyo)

10:00 AM - 10:15 AM

△ [19a-Z27-5] Depth-resolved tomographic analysis on thick AlN films grown on NPSS using nanobeam X-ray diffraction

〇Nozomi Yamamoto¹, Yusuke Hayashi¹, Takeaki Hamachi¹, Yuta Nakanishi¹, Tetsuya Tohei¹, Kazushi Sumitani², Yasuhiko Imai², Shigeru Kimura², Kanako Shojiki³, Hideto Miyake^3,4, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.JASRI, 3.Grad. Sch. Eng., 4.Grad. Sch. RIS, Mie Univ)

10:30 AM - 10:45 AM

[19a-Z27-6] Vacancy-type defects in AlN deposited by RF sputtering studied by positron annihilation

〇Akira Uedono¹, Kanako Shojiki², Kenjiro Uesugi³, Shigefusa F. Chichibu⁴, Shoji Ishibashi⁵, Marcel Dickmann⁶, Werner Egger⁶, Christoph Hugenschmidt⁷, Hideto Miyake^2,8 (1.Univ. of Tsukuba, 2.Grad. Sch. Eng. Mie Univ., 3.Str. Plan. Off. RR Mie Univ, 4.Tohoku Univ., 5.AIST, 6.UniBwM, 7.TUM, 8.Gra. Sch. RIS Mie Univ.)

10:45 AM - 11:00 AM

[19a-Z27-7] Luminescent properties of Si-doped AlN substrates grown by HVPE on freestanding AlN

〇Shigefusa Chichibu¹, Kohei Shima¹, Kazunobu Kojima¹, Moody Baxter², Seiji Mita², Ramon Collazo³, Zlatko Sitar³, Yoshinao Kumagai⁴, Akira Uedono⁵ (1.IMRAM-Tohoku Univ., 2.Adroit Materials, 3.NC State University, 4.Tokyo Uni Agr Tech, 5.Univ. of Tsukuba)

11:00 AM - 11:15 AM

[19a-Z27-8] Internal quantum efficiency of AlGaN multiple quantum wells grown on face-to-face annealed sputter-deposited AlN template

Atsushi Fujii¹, Ryota Oshimura¹, Takafumi Kusaba¹, Satoshi Kurai¹, 〇Hideaki Murotani², Kenjiro Uesugi³, Hideto Miyake⁴, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.SPORR, Mie Univ., 4.Grad. Sch.of RIS., Mie Univ.)

11:15 AM - 11:30 AM

[19a-Z27-9] Temperature dependence of threshold excitation power density for stimulated emission in AlGaN-based UV-C multiple quantum wells

Akira Hamada¹, Takuya Fukuda¹, Satoshi Kurai¹, 〇Hideaki Murotani², Noritoshi Maeda³, M. Ajmal Khan³, Masafumi Jo³, Hideki Hirayama³, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.RIKEN)

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