[16a-Z23-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

[16a-Z23-4] Growth of β-Fe_1-xRu_xSi₂ polycrystalline thin films and their PL properties

〇(B)Ren Yoshihara¹, Hiroki Nishi¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech)

Keywords:beta-FeSi2, mixed semiconductor, silicide semiconductor

We have fabricated β-(Fe_1-xRu_x)Si₂ polycrystalline thin films in order to increase the interband transition probability of β-FeSi₂ polycrystalline thin films.As a result, β-(Fe_1-xRu_x)Si₂ polycrystalline thin films up to x = 0.35 were successfully fabricated and confirmed to obey the Vegard rule.In this study, we further increased the amount of Ru and evaluated the luminescence properties of the prepared β-(Fe_1-xRu_x)Si₂ polycrystalline thin films.