[17a-Z19-1~12] 10.2 スピン基盤技術・萌芽的デバイス技術

▲ [17a-Z19-11] Magnetization-dependent inverse spin Hall effect at perpendicular magnetized Tb-Co/Pt interface

〇(P)Ahmet Yagmur¹、Hiroyuki Awano¹、Kenji Tanabe¹ (1.Toyota Tech. Inst.)

キーワード：Inverse spin Hall effect, spin Seebeck effect

Recently, it has been investigated that spin-orbit coupling at magnetic/nonmagnetic interface induce a spin-to-charge current conversion with different symmetry from the conventional inverse spin Hall effect (c-ISHE) [1,2]. Here, the orientation of spin current polarization can be manipulated by the direction of perpendicular magnetized material (figure) [3]. In this study, we investigate the magnetization-dependent inverse spin Hall effect (md-ISHE) in SiN(10 nm cap)/Tb_xCo_100-x(19 nm)/Pt(1 nm)/YIG(167 nm)/SiO₂ (substrate) devices due to spin Seebeck effect. We clearly observe voltage signals due to the c-ISHE and md-ISHE in our devices, which the md-ISHE polarity depends on the magnetization direction of spin converter layer. Moreover, the magnitude of induced charge current due to md-ISHE is observed to be almost insensitive for all Tb_xCo_100−x samples, whereas the c-ISHE significantly depends on the composition ratio.
This work was partially supported by a Grant-in-Aid for Scientific Research(C) (Grant No. 20K05307) from JSPS and the Tokai Foundation of Technology.