[19p-P01-1~23] 17 ナノカーボン(ポスター)

[19p-P01-18] グラフェン/ SiCテンプレート上に乱層グラフェンの形成メカニズム

〇姚 瑶¹、井ノ上 泰輝¹、根岸 良太¹、高村 真琴²、谷保 芳孝²、小林 慶裕¹ (1.阪大、2.NTT物性研)

キーワード：グラフェン形成、CVDグラフェン

Twisted few layer graphene (FLG) has recently attracted great attention due to the appearance of the exotic electrical properties. In previous study, we reported that the FLG was synthesized by overlayer growth of graphene on a monolayer graphene template using a chemical vapor deposition (CVD) method. We found that moiré pattern appears in the lattice structure of the grown graphene 2-dimensional (2D) island and the grown 2D graphene islands have the random twisted angles. Coalescence process of graphene island with various twist angles was indicated by temperature dependence of graphene island size. In this study, to understand the growth mechanism of twisted FLG, we further examined the dependence of pressure systematically. With detail analysis of graphene islands grown on graphene template, we proposed the vertical and lateral morphology model.