[21a-A102-1~7] 9.3 Nanoelectronics

Wed. Sep 21, 2022 9:30 AM - 11:15 AM A102 (A102)

Takahide Oya(Yokohama Natl. Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

△ [21a-A102-1] Electrical properties of metallic nanodot arrays formed on thermally oxidized and sputter deposited SiO₂ films

〇Takayuki Gyakushi¹, Ikuma Amano¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Hokkaido Univ.)

9:45 AM - 10:00 AM

△ [21a-A102-2] Stability Improvement of Metallic Single-Electron Transistors by a Cover of Atomic Layer Deposited Insulating Film

〇Yoshiaki Iwata¹, Go Sakamoto², Alka Singh³, Hiroaki Satoh⁴, Hiroshi Inokawa⁴ (1.GSIST, Shizuoka Univ., 2.Eng., Shizuoka Univ., 3.GSST, Shizuoka Univ., 4.RIE, Shizuoka Univ.)

10:00 AM - 10:15 AM

[21a-A102-3] Room Temperature Operation of Si-2x2 Derivative Single Molecule Transistors

〇Fu Ishizuka¹, Ryo Shintani², Yutaka Majima¹ (1.Tokyo Tech., 2.Osaka Univ.)

10:15 AM - 10:30 AM

[21a-A102-4] Rapid Impedance Drop during Dielectrophoretic Assembly of Gold Nanoparticle Arrays

Tetsuya Urae¹, Hiroshi Shimada¹, 〇Yoshinao Mizugaki¹ (1.UEC Tokyo)

10:30 AM - 10:45 AM

△ [21a-A102-5] Investigation of Nanogap Formation by Electromigration Method in Applied Electric Field II

〇Hiroyuki Motoyama^1,2, Hiroshi Suga¹, Hisashi Shima², Hiroyuki Akinaga², Yasuhisa Naitoh² (1.ChibaTech, 2.AIST)

10:45 AM - 11:00 AM

[21a-A102-6] Hydrogen sensor fabricated using a platinum/titanium oxide nanocontact

〇Yasuhisa Naitoh¹, Sumiya Touru¹, Shima Hisashi¹, Akinaga Hiroyuki¹ (1.AIST)

11:00 AM - 11:15 AM

[21a-A102-7] Fabrication of polycrystalline LaF₃ electrodes and comparison with single crystal electrode for high performance fluoride ion sensor

〇(M2)Kaito Kanda¹, Yamada Tetsuya¹, Yanagida Yasuko¹, Mayanagi Gen², Takahashi Masahiro² (1.Tokyo Tec. IIR, 2.Tohoku Univ. Division of Oral Ecology and Biochemistry)

Session information

[21a-A102-1~7] 9.3 Nanoelectronics

△ [21a-A102-1] Electrical properties of metallic nanodot arrays formed on thermally oxidized and sputter deposited SiO₂ films

△ [21a-A102-2] Stability Improvement of Metallic Single-Electron Transistors by a Cover of Atomic Layer Deposited Insulating Film

[21a-A102-3] Room Temperature Operation of Si-2x2 Derivative Single Molecule Transistors

[21a-A102-4] Rapid Impedance Drop during Dielectrophoretic Assembly of Gold Nanoparticle Arrays

△ [21a-A102-5] Investigation of Nanogap Formation by Electromigration Method in Applied Electric Field II

[21a-A102-6] Hydrogen sensor fabricated using a platinum/titanium oxide nanocontact

[21a-A102-7] Fabrication of polycrystalline LaF₃ electrodes and comparison with single crystal electrode for high performance fluoride ion sensor

Authenticate

Session information

[21a-A102-1~7] 9.3 Nanoelectronics

△ [21a-A102-1] Electrical properties of metallic nanodot arrays formed on thermally oxidized and sputter deposited SiO2 films

△ [21a-A102-2] Stability Improvement of Metallic Single-Electron Transistors by a Cover of Atomic Layer Deposited Insulating Film

[21a-A102-3] Room Temperature Operation of Si-2x2 Derivative Single Molecule Transistors

[21a-A102-4] Rapid Impedance Drop during Dielectrophoretic Assembly of Gold Nanoparticle Arrays

△ [21a-A102-5] Investigation of Nanogap Formation by Electromigration Method in Applied Electric Field II

[21a-A102-6] Hydrogen sensor fabricated using a platinum/titanium oxide nanocontact

[21a-A102-7] Fabrication of polycrystalline LaF3 electrodes and comparison with single crystal electrode for high performance fluoride ion sensor

Authenticate

△ [21a-A102-1] Electrical properties of metallic nanodot arrays formed on thermally oxidized and sputter deposited SiO₂ films

[21a-A102-7] Fabrication of polycrystalline LaF₃ electrodes and comparison with single crystal electrode for high performance fluoride ion sensor