Symposium (Oral)
Symposium » Forefront of interface science and technology of wide bandgap semiconductor MOS devices
Wed. Sep 21, 2022 1:30 PM - 5:35 PM M206 (Multimedia Research Hall)
Heiji Watanabe(Osaka Univ.), Digh Hisamoto(Hitachi)
△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above
1:30 PM - 1:50 PM
〇Tatsuo Oomori1 (1.Mitsubishi Electric Corp.)
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1:50 PM - 2:20 PM
〇Tsunenobu Kimoto1, Keita Tachiki1, Koji Ito1, Kyota Mikami1, Mitsuaki Kaneko1 (1.Kyoto Univ.)
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2:20 PM - 2:35 PM
〇Tetsuo Hatakeyama1, Hirohisa HIrai2, MItsuru Sometani2, Dai OKamoto1, MItsuo Okamoto2, Shinsuke Harada2 (1.Toyama pref. Univ., 2.AIST)
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2:35 PM - 3:05 PM
〇Tamotsu Hashizume1, Masamichi Akazawa1 (1.Hokkaido Univ.)
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3:05 PM - 3:35 PM
〇Seiichi Miyazaki Miyazaki1, Akio Ohta1 (1.Nagoya Univ.)
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3:50 PM - 4:20 PM
〇Kenji Shiraishi1, Atsushi Oshiyama1 (1.Nagoya Univ.)
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4:20 PM - 4:50 PM
〇Koji Kita1 (1.Univ. of Tokyo)
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4:50 PM - 5:05 PM
〇Hironobu Miyamoto1, Yuki Koishikawa1, Daiki Wakimoto1, Kohei Sasaki1, Akito Kuramata1 (1.Novel Crystal Technology, Inc.)
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5:05 PM - 5:35 PM
〇Norio Tokuda1 (1.Kanazawa Univ.)
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