Symposium (Oral)

[21p-M206-1~9] Forefront of interface science and technology of wide bandgap semiconductor MOS devices

Wed. Sep 21, 2022 1:30 PM - 5:35 PM M206 (Multimedia Research Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

1:30 PM - 1:50 PM

[21p-M206-1] Introduction of MEXT Program Innovative Power-Electronics Technologies (INNOPEL) and Expectation for Basic Science Research on Power Devices

〇Tatsuo Oomori¹ (1.Mitsubishi Electric Corp.)

1:50 PM - 2:20 PM

〇Tsunenobu Kimoto¹, Keita Tachiki¹, Koji Ito¹, Kyota Mikami¹, Mitsuaki Kaneko¹ (1.Kyoto Univ.)

2:20 PM - 2:35 PM

〇Tetsuo Hatakeyama¹, Hirohisa HIrai², MItsuru Sometani², Dai OKamoto¹, MItsuo Okamoto², Shinsuke Harada² (1.Toyama pref. Univ., 2.AIST)

2:35 PM - 3:05 PM

〇Tamotsu Hashizume¹, Masamichi Akazawa¹ (1.Hokkaido Univ.)

3:05 PM - 3:35 PM

〇Seiichi Miyazaki Miyazaki¹, Akio Ohta¹ (1.Nagoya Univ.)

3:50 PM - 4:20 PM

〇Kenji Shiraishi¹, Atsushi Oshiyama¹ (1.Nagoya Univ.)

4:20 PM - 4:50 PM

〇Koji Kita¹ (1.Univ. of Tokyo)

4:50 PM - 5:05 PM

〇Hironobu Miyamoto¹, Yuki Koishikawa¹, Daiki Wakimoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology, Inc.)

5:05 PM - 5:35 PM

〇Norio Tokuda¹ (1.Kanazawa Univ.)