2022年第83回応用物理学会秋季学術講演会

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10 スピントロニクス・マグネティクス » 10.3 スピンデバイス・磁気メモリ・ストレージ技術

[20a-B101-1~10] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

2022年9月20日(火) 09:30 〜 12:15 B101 (B101)

鈴木 和也(東北大)、中野 貴文(東北大)

11:15 〜 11:30

[20a-B101-7] Giant magnetoresistance and interlayer exchange coupling in [FeCoNi/Cu] multilayers with NiFeCr seed layer

〇(P)Prabhanjan Dilip Kulkarni1、Tomoya Nakatani1、Zehao Li1、Taisuke Sasaki1、Yuya Sakuraba1 (1.NIMS)

キーワード:Giant magnetoresistance, Interlayer exchange coupling, Microstructure

We present a systematic study on the giant magnetoresistance (GMR) and interlayer exchange couplings (IEC) in polycrystalline [Fe16Co66Ni18/Cu]5/Fe16Co66Ni18 multilayer films deposited on NiFeCr seed layers with various compositions. The maximum ΔR/R of 35±2.5% and strong antiparallel IEC were observed for the seed layers with a particular Ni:Fe ratio of (Ni0.55Cr0.45)100-yFey with 0≤y≤47. Structural studies confirm that this high ΔR/R is related to a strong fcc [111] texture and coarse grains of the GMR films. We also observed that the film deposited on Ni32Fe33Cr35 seed layer showed stronger [111] texture, but lower ΔR/R (17%) than those deposited on Ni36Fe51Cr13 seed layer (ΔR/R=28%). Microstructural analysis indicated an increased arithmetic average roughness (Ra) of the interfaces between FeCoNi and Cu layers for the films with the Ni32Fe33Cr35 seed layer. We argue that this higher Ra causes a reduction in antiparallel IEC and increase a biquadratic (90°) IEC and thus reduce ΔR/R.