[20a-M206-1~10] FS.1 Focused Session "AI Electronics"

△ [20a-M206-10] Tunnel Conductance Modeling of Spintronics Devices Based on Temperature Dynamics

〇(D)Yushi Kikuchi¹, Yoshihiko Horio¹, Shunsuke Fukami^1,2, Hiroyasu Ando² (1.RIEC, Tohoku Univ., 2.AIMR, Tohoku Univ.)

Keywords:Spintronics device, neural network circuit, Mathematical Model

Spintronics devices are known to reproduce some functions of synapses (e.g., spike-timing-dependent plasticity (STDP)) and neurons (e.g., leaky integration of input spikes). However, only a few models have been investigated for the use of spintronics devices in neural network circuits. In this paper, we propose a tunnel conductance model that focuses on the temperature dynamics of spintronic devices.