5:35 PM - 6:05 PM
[20p-A200-10] Investigations on semiconductor bilayer moiré system using hBN
Keywords:Transition metal dichalcogenide, semiconductor, moire
In this talk, we will introduce our recent studies on MoSe2/hBN/MoSe2 moíre lattice system by optical spectroscopic measurements, which revealed the formation of subband structure by moíre interference and the existence of strongly correlated electron systems. We have also found that the potential difference between the two layers is increased by the application of an electric field using the single-layer hBN as a spacer, which enabled the observation of Feshbach resonance and exciton hybridization based on the control of the layer degrees of freedom.