[20p-C306-1~9] 15.6 Group IV Compound Semiconductors (SiC)

[20p-C306-4] 【Highlighted Presentation】Suppression of partial dislocation glide on the basal plan in SiC epitaxial layer by proton implantation

〇Shunta Harada¹, Hitoshi Sakane², Toshiki Mii³, Masashi Kato³ (1.Nagoya Univ., 2.SHI-ATEX, 3.Nagoya Inst, Tech.)

Keywords:SiC, dislocation, foward voltage degradation

As a result of investigating the effect of proton implantation on the partial dislocations glide on the basal plane, it was revealed that stacking defect shrinkage due to heat treatment is suppressed by proton implantation. From this, it was suggested that proton implantation suppresses the forward voltage degradation by inhibiting the movement of partial dislocations.