Simulation of Coulomb screening of a MOS interface charge

Koichi Fukuda; Hiroshi Oka; Junichi Hattori; Hidehiro Asai; Shota Iizuka; Hiroyuki Ota; Takahiro Mori

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21a-C206-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Sep 21, 2022 9:00 AM - 12:30 PM C206 (C206)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.)

11:30 AM - 11:45 AM

[21a-C206-10] Simulation of Coulomb screening of a MOS interface charge

〇Koichi Fukuda¹, Hiroshi Oka¹, Junichi Hattori¹, Hidehiro Asai¹, Shota Iizuka¹, Hiroyuki Ota¹, Takahiro Mori¹ (1.AIST)

Keywords:Semiconductor, Device Simulation, Coulomb screening

It was quantitatively determined by numerical simulation that the Coulomb shielding of the point charge placed at the MOS interface becomes stronger at low temperature.