[21p-A205-1~21] 3.14 シリコンフォトニクス・集積フォトニクス（旧3.15）

▼ [21p-A205-5] Numerical analysis of III-V MOS optical modulator with graphene transparent electrode for efficient phase modulation

〇(D)Tipat Piyapatarakul¹、Hanzhi Tang¹、Kasidit Toprasertpong¹、Shinichi Takagi¹、Mitsuru Takenaka¹ (1.Univ. of Tokyo)

キーワード：III-V semiconductor, graphene, MOS optical modulator

We propose the InGaAsP metal-oxide-semiconductor (MOS) optical modulator with doped graphene as transparent gate electrode with the analysis of the modulation properties and bandwidth. With graphene transparent gate electrode, we can thoroughly utilize the accumalated free-carrier refractive index change in InGaAsP waveguide, allowing the phase modulation efficiency up to 0.79 V·cm with low optical loss at pi phase shift of 0.22 dB when the gate oxide thickness is 100 nm. In addition, high electron mobility in InGaAsP also enables the modulation bandwidth to achieve over 100 GHz.