[22a-A105-1~11] 12.7 Biomedical Engineering and Biochips

△ [22a-A105-5] Fabrication procedure and evaluation of electrical characteristics in solution-gated ITO thin film channel field-effect transistor

〇(M1)Ritsu Katayama¹, Toshiya Sakata¹ (1.The Univ. of Tokyo)

Keywords:biosensor, semiconductor, Indium Tin Oxide

In this study, we found a fabrication method for solution-gate thin-film ITO channel FETs, which do not have an interface between source/channel/drain and are easy to miniaturize. The desired solution-gate thin-film ITO channel FET can be fabricated by depositing a conductive ITO film of about 100 nm thickness on a glass substrate, and then using photolithography to etch only the channel ITO with acid to a thickness of about 20 nm, which shows semiconductor characteristics.