10:00 AM - 10:15 AM
△ [22a-B204-5] Theoretical Analysis of Tunneling Current in 4H-SiC Schottky Barrier Diodes
Keywords:semiconductor, SiC
Presentation information
Oral presentation
13 Semiconductors » 13.7 Compound and power devices, process technology and characterization
[22a-B204-1~11] 13.7 Compound and power devices, process technology and characterization
Thu. Sep 22, 2022 9:00 AM - 12:00 PM B204 (B204)
Mitsuru Sometani(AIST), Takuji Hosoi(Kwansei Gakuin Univ.)