[23a-A202-1~10] 6.2 Carbon-based thin films

▼ [23a-A202-7] Electrical characterization of Al₂O₃/diamond MOS interface under various wet-annealing times

〇Xufang Zhang¹, Tsubasa Matsumoto¹, Mitsuru Sometani², Masahiko Ogura², Toshiharu Makino², Daisuke Takeuchi², Christoph.E Nebel^1,3, Takao Inokuma¹, Satoshi Yamasaki¹, Norio Tokuda¹ (1.Kanazawa University, 2.AIST, 3.Diacara)

Keywords:diamond, MOS interface

Diamond power MOSFETs have been intensively investigated and our group has developed the inversion-type p-channel diamond MOSFET by using n-type diamond body [1]. The diamond surface was OH-terminated on O-terminated diamond and Al₂O₃ was employed as gate oxide formed by atomic layer deposition (ALD). Despite the normally off operation, the MOSFET suffers from low channel mobility, which would be mainly attributed to the poor interface quality of Al₂O₃/diamond, which, however, has not been studied in detail. In this work, we focused on the electrical characterization of Al₂O₃/diamond MOS interface in the valence band side of diamond by fabricating p-type diamond MOS capacitors with different wet annealing times.