[23a-A401-1~6] 6.3 Oxide electronics

[23a-A401-4] Atomic layer deposition of ZnO thin films using a novel liquid precursor, Zn(Cp^pm)₂.

〇Fumikazu Mizutani¹, Makoto Mizui¹, Nobutaka Takahashi¹, Mari Inoue², Toshihide Nabatame² (1.Kojundo Chem. Lab., 2.NIMS)

Keywords:atomic layer deposition, zinc oxide, new precursor

ZnO, a wide-gap semiconductor, has been studied as a material for transparent conductive films and light-emitting devices. Diethylzinc (DEZ) has been widely studied as a Zn precursor for depositing a ZnO thin film by ALD. However, the DEZ is pyrophoric and requires careful handling. Here, we report the results of an examination of ALD using bis (n-propyltetramethylcyclopentadienyl) zinc as a Zn precursor for ALD that does not spontaneously ignite.