Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[22a-E105-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Tue. Mar 22, 2022 9:30 AM - 11:30 AM E105 (E105)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[22a-E105-1] Control Hydrophobicity by Controlled Quartz Nanopillar Structures

〇(M2)Sou Takeuchi¹, Daisuke Ohori¹, Teruhisa Ishida², Mami Tanaka², Kazuhiko Endo³, Seiji Samukawa^1,4 (1.IFS, Tohoku Univ., 2.NAGASE & CO., LTD., 3.AIST, 4.AIMR, Tohoku Univ.)

9:45 AM - 10:00 AM

[22a-E105-2] Nonradiative Recombination Mapping of Contaminated Si Using Laser Heterodyne Photothermal Displacement Method

〇Tomoki Harada^1,2, Yuki Arata¹, Kosuke Morita¹, Tetsuo Ikari¹, Atsuhiko Fukuyama¹ (1.Univ. of Miyazaki, 2.JSPS Research Fellow)

10:00 AM - 10:15 AM

△ [22a-E105-3] Fabrication of Si oxide film using extremely diluted HF solution

〇(B)Taiki Arai¹, Rintaro Kudo¹, Toshiaki Suzuki¹, Akitaka Yoshigoe², Masaaki Niwa¹, Mitsuya Motohashi¹ (1.Tokyo Denki Univ., 2.JAEA Materials Sciences Research Center)

10:15 AM - 10:30 AM

[22a-E105-4] Residue-free large-area graphene transfer for understanding FLP mechanism at metal/Si interface

〇Tomonori Nishimura¹, Ryuichi Nakajima¹, Yih-Ren Chang¹, Haruki Uchiyama¹, Kosuke Nagashio¹ (1.The Univ. of Tokyo)

10:45 AM - 11:00 AM

▲ [22a-E105-5] Evaluation of random telegraph noise in Hf-based MONOS nonvolatile memory with HfO₂ and HfON tunneling layer

〇(DC)Jooyoung Pyo¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

11:00 AM - 11:15 AM

▼ [22a-E105-6] The origin of opto-functional enhancement in ZnO/CuO nanoforest structure fabricated by submerged photosynthesis

〇Melbert Jeem¹, Yuki Takahashi², Lihua Zhang³, Seiichi Watanabe³ (1.RIES, Hokkaido Univ., 2.Graduate School of Engineering, Hokkaido Univ., 3.Faculty of Engineering, Hokkaido Univ.)

11:15 AM - 11:30 AM

△ [22a-E105-7] Equivalent Model Based Band-to-band Tunneling Simulation of Semiconductor Nanowires

〇Jo Okada¹, Nobuya Mori¹ (1.Osaka Univ.)

Session information

[22a-E105-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[22a-E105-1] Control Hydrophobicity by Controlled Quartz Nanopillar Structures

[22a-E105-2] Nonradiative Recombination Mapping of Contaminated Si Using Laser Heterodyne Photothermal Displacement Method

△ [22a-E105-3] Fabrication of Si oxide film using extremely diluted HF solution

[22a-E105-4] Residue-free large-area graphene transfer for understanding FLP mechanism at metal/Si interface

▲ [22a-E105-5] Evaluation of random telegraph noise in Hf-based MONOS nonvolatile memory with HfO₂ and HfON tunneling layer

▼ [22a-E105-6] The origin of opto-functional enhancement in ZnO/CuO nanoforest structure fabricated by submerged photosynthesis

△ [22a-E105-7] Equivalent Model Based Band-to-band Tunneling Simulation of Semiconductor Nanowires

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Session information

[22a-E105-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[22a-E105-1] Control Hydrophobicity by Controlled Quartz Nanopillar Structures

[22a-E105-2] Nonradiative Recombination Mapping of Contaminated Si Using Laser Heterodyne Photothermal Displacement Method

△ [22a-E105-3] Fabrication of Si oxide film using extremely diluted HF solution

[22a-E105-4] Residue-free large-area graphene transfer for understanding FLP mechanism at metal/Si interface

▲ [22a-E105-5] Evaluation of random telegraph noise in Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layer

▼ [22a-E105-6] The origin of opto-functional enhancement in ZnO/CuO nanoforest structure fabricated by submerged photosynthesis

△ [22a-E105-7] Equivalent Model Based Band-to-band Tunneling Simulation of Semiconductor Nanowires

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▲ [22a-E105-5] Evaluation of random telegraph noise in Hf-based MONOS nonvolatile memory with HfO₂ and HfON tunneling layer