[22a-E206-1~6] 12.4 有機EL・トランジスタ

▲ [22a-E206-2] Effect of Hole Transport Materials on Cd-free ZnCuInS/ZnS-based QLED
with Mixed-Single Layer

〇(DC)Mohammad MostafizurRahman Biswas¹、Hiroyuki Okada¹ (1.University of Toyama, Japan)

キーワード：Quantum dot (QD) light-emitting diodes, Mixed-single layer, Hole-transport materials

Quantum dot (QD) light-emitting diodes (QLEDs) is one of the eye catching topics for the researchers due to its exponential commercial growth. Recently, the mentionable attributes of Cd-free QDs creates much resonance in the display industries. Considering this, researchers are trying to improve the device performance. The performances of the QLED depends not only on the fabrication procedures but also on the device structure, particularly use of electron transport material (ETM), and hole transport material (HTM) to balance the flow of carriers. Normally, the conventional hetero-structured device is familiar for fabrication. Besides, the performance of the mixed-single (MSL) device is suitable for its suitable for carrier injection balance into QDs, since all the materials are in mixing condition. Another significant feature of MSL-QLED is that the whole QD is covered with the organic layer. This situation is better for the device using common two-mono-layered QD devices. By considering this work, the flow of holes is controlled by changing HTMs in the MSL-QLED to improve the device performance.