[22a-E303-1~9] 3.15 シリコンフォトニクス・集積フォトニクス

▲ [22a-E303-8] Impact of gate oxide thickness on modulation properties of graphene/III-V hybrid MOS optical modulator

〇(D)Tipat Piyapatarakul¹、Hanzhi Tang¹、Kasidit Toprasertpong¹、Shinichi Takagi¹、Mitsuru Takenaka¹ (1.Univ. of Tokyo)

キーワード：graphene, III-V semiconductor, MOS optical modulator

Utilizing the reported hybrid MOS structure of single-layer graphene and n-InGaAs at mid-infrared wavelength for its efficient modulation power and low loss, the impact of gate oxide thickness is analyzed to design the device with potentially broad bandwidth, promising for satisfying demands for high-speed operation.