[22p-P03-1~23] 17 Nanocarbon Technology(Poster)

[22p-P03-8] Direct growth of graphene oxide on GaN using Alcohol CVD

〇Shohei Yabuta¹, Ryusei Kawase¹, Tsutomu Araki¹, Shinichiro Mouri¹ (1.Ritsumeikan Univ.)

Keywords:graphene, nitride semiconductor, crystal growth

Graphene/GaN devices have been studied recently, but there is a problem that remained impurities introduced during transfer process deteriorate its performance. In this study, we have attempted to grow graphene directly on GaN substrates using alcohol CVD method. It is implied that the grown film has similar structure with graphene oxide by the analysis of Raman spectrum in higher wave number region. Furthermore, the Raman intensity ratio of G-mode to D-mode (G/D ratio) was slightly improved by annealing in a hydrogen atmosphere, which suggests the reduction effect of graphene oxide.