Preparation of EuNiO<sub>3</sub> thin films and their hydrogen induced high resistivity phenomenon

Yuki Taniguchi, Musa Alaydrus, Ikutaro Hamada, Azusa Hattori, Haobo Li, Hidekazu Tanaka

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[23p-E204-1~13] 6.3 Oxide electronics

Wed. Mar 23, 2022 1:30 PM - 5:00 PM E204 (E204)

Akira Chikamatsu(Ochanomizu University), Hiroyuki Oguchi(Shibaura Institute of Technology)

2:00 PM - 2:15 PM

[23p-E204-3] Preparation of EuNiO₃ thin films and their hydrogen induced high resistivity phenomenon

〇Yuki Taniguchi¹, Musa Alaydrus², Ikutaro Hamada², Azusa Hattori¹, Haobo Li¹, Hidekazu Tanaka² (1.SANKEN, Osaka Univ, 2.Graduate School of Engineering, Osaka Univ)

Keywords:iontonics, metal insulator transition, first principle calculation

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Presentation information

[23p-E204-1~13] 6.3 Oxide electronics

[23p-E204-3] Preparation of EuNiO3 thin films and their hydrogen induced high resistivity phenomenon

[23p-E204-3] Preparation of EuNiO₃ thin films and their hydrogen induced high resistivity phenomenon