[23p-E307-1~20] 13.5 デバイス／配線／集積化技術

▼ [23p-E307-11] Analysis of Width-Dependent Drain Current Variability in Extremely Narrow GAA Silicon Nanowire MOSFETs

〇(M2C)Zihao Liu¹、Tomoko Mizutani¹、Takuya Saraya¹、Masaharu Kobayashi^1,2、Toshiro Hiramoto¹ (1.IIS,Univ. of Tokyo、2.d.lab,Univ. of Tokyo)

キーワード：variability, nanowire

The width dependent drain current variability in extremely narrow Gate-All-Around (GAA) silicon nanowire MOSFET is analyzed by variability decomposition and Pelgrom plot analysis. The current variability rapidly increases below 4nm nanowire width and becomes even worse in 2nm due to silicon-thickness-induced-mobility-fluctuation and Vthc variability which are essentially induced by quantum effects