A Single Device MOSFET Series Resistance Extraction Method

KIYOSHI TAKEUCHI, TOMOKO MIZUTANI, TAKUYA SARAYA, MASAHARU KOBAYASHI, TOSHIRO HIRAMOTO

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[23p-E307-1~20] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Wed. Mar 23, 2022 1:30 PM - 7:00 PM E307 (E307)

Kazuhiko Endo(AIST), Masahiro Hori(静大)

3:30 PM - 3:45 PM

[23p-E307-8] A Single Device MOSFET Series Resistance Extraction Method

〇KIYOSHI TAKEUCHI¹, TOMOKO MIZUTANI¹, TAKUYA SARAYA¹, MASAHARU KOBAYASHI¹, TOSHIRO HIRAMOTO¹ (1.Univ. Tokyo)

Keywords:MOSFET, Parasitic Resistance, Series Resistance

For designing and modeling MOSFETs, accurate estimation of series resistance is essential. In this talk, a simple series resistance extraction method using only DC current vs. voltage characteristics of a single target device is presented. Optimization based on convergence of curves is used, taking into account weak velocity saturation. The method was validated using both TCAD and experiments.