[24a-E301-1~10] 3.11 フォトニック構造・現象

▲ [24a-E301-3] High-Q SiC nanocavity with TM-like polarization

〇(PC)Heungjoon Kim¹、Bong-Shik Song^1,2、Takashi Asano¹、Susumu Noda¹ (1.Kyoto Univ.、2.Sungkyunkwan Univ.)

キーワード：SiC TM nanocavity

A high-Q TM-polarized SiC nanocavity is essential for developing an efficient spin-photon interface based on a Si-vacancy center in SiC. Here, we propose a two-layered SiC photonic crystal (PC) consisting of rod- and hole-type PC slabs to realize such a cavity. The two-layered PC has a wide complete photonic band gap (PBG) of ~ 7%. By introducing a two-step heterostructure cavity, a tight localization of light in a few SiC rods mainly consisting of a TM-like mode can be realized, where the complete PBG plays an important role to inhibit the in-plane leakage of light through TE-like slab modes. The Q factor and modal volume are calculated to be 9.3×10⁵ and 2.7 (λ/n)³, respectively. This structure can be fabricated by two-step etching of a SiC slab.