15:00 〜 15:15
▼ [26p-E201-6] Field-Free Magnetization Switching Using Spin-Splitter Torque in Metallic Collinear Antiferromagnet RuO2
キーワード：Collinear antiferromagnet, Spin-splitter torque, Field-free switching
Antiferromagnetic (AFM) spintronics is attracting much attention for its potential to realize high density integration of non-volatile memories such as MRAM, because there is no stray field being different from ferromagnets.
Recently, it has theoretically been predicted that highly efficient spin currents can be generated in a metallic collinear AFM RuO2 at room temperature. This is a called “spin-splitter effect”. Two advantages of this spin-splitter effect are as follows: (1) it requires no spin-orbit interaction that is essential in the conventional spin Hall effect, and (2) it can create a spin current that efficiently switches the perpendicular magnetization, which is beneficial for high memory density. However, field-free magnetization switching via this effect has not been demonstrated so far.
In this study, we demonstrated field-free switching using the spin-splitter torque with z-polarized component when a current was applied perpendicular to Néel vector projected onto the film plane.
Recently, it has theoretically been predicted that highly efficient spin currents can be generated in a metallic collinear AFM RuO2 at room temperature. This is a called “spin-splitter effect”. Two advantages of this spin-splitter effect are as follows: (1) it requires no spin-orbit interaction that is essential in the conventional spin Hall effect, and (2) it can create a spin current that efficiently switches the perpendicular magnetization, which is beneficial for high memory density. However, field-free magnetization switching via this effect has not been demonstrated so far.
In this study, we demonstrated field-free switching using the spin-splitter torque with z-polarized component when a current was applied perpendicular to Néel vector projected onto the film plane.