[26p-E202-1~14] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▲ [26p-E202-14] X-ray Topography Observation of Vertical Bridgman and Edge-Defined Film-fed Growth-Grown (001) Single β-Ga₂O₃ Crystals

〇(M2)Muhidul Islam Chaman¹、Keigo Hoshikawa²、Sayleap Sdoeung¹、Makoto Kasu¹ (1.SAGA UNIV.、2.SHINSHU UNIV.)

キーワード：beta-gallium oxide, X-ray topography, crystallographic defects

β-gallium oxide (β-Ga₂O₃) exhibits an ultrawide bandgap (4.8 eV) and a high breakdown field (8 MV/cm). Therefore, β-Ga₂O₃ is very promising for high-efficiency power devices. In addition, owing to its high growth rate, low-cost single-crystal β-Ga₂O₃ substrates can be synthesized readily using various melt growth techniques.
In this study, Synchrotron X-Ray topography (XRT) experiments were performed both in transmission and reflection geometry to determine b from g·b invisibility criteria for VB and EFG crystal.