The 70th JSAP Spring Meeting 2023

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15p-A301-1~13] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Mar 15, 2023 1:00 PM - 4:45 PM A301 (Building No. 6)

Takeshi Mitani(AIST), Hirokuni Asamizu(ローム)

1:00 PM - 1:15 PM

[15p-A301-1] Survey of Parameters Affecting Pareto Front in SiC Solution Growth Method.

〇Daiki Shimoda1, Kentaro Kutsukake2,3, Shunta Harada1,3, Miho Tagawa1,3, Toru Ujihara1,3 (1.Grad. School of Eng. Nagoya Univ., 2.AIP RIKEN, 3.IMaSS Nagoya Univ.)

Keywords:SiC, optimization, crystal growth