15:15 〜 15:30
▲ [15p-A403-10] Application of a-SiC Electron Transport Layer in BaSi2 Solar cells
キーワード：BaSi2, SiC, solar cell
Barium disilicide (BaSi2) is a potential solar cell material. Currently, most BaSi2 solar cells are constructed on wafer-based Si substrates. It is of great importance to form it on inexpensive substates like SiO2. The sputter-deposited BaSi2 films on TiN/SiO2 showed high photoresponsivity exceeding 1 A/W. This result shows the feasibility of n-BaSi2 as a light absorber layer on a cheap TiN/SiO2 substrate. It should be noted that a Schottky barrier height may theoretically be formed when BaSi2 and TiN are in direct contact. Actually, due to the defects at the interface, it didn’t have such a high Schottky barrier height because the high photoresponsivity has been obtained. The defect level and density of n-BaSi2/TiN are not yet clear. It is necessary to optimize the n-BaSi2/TiN interface.
Sputtered a-SiC has a band gap of 2.0 eV and a small qχ of 3.5 eV close to that of BaSi2, confirming the passivation effect on BaSi2. Thus a-SiC can be an ideal choice of electron transport layer (ETL) inserted between n-BaSi2/TiN. We chose p+-BaSi2 as the hole transport layer to solve the problem of the band offset between the BaSi2-based pn junction. The role of a-SiC as an ETL in p+-BaSi2/n-BaSi2/a-SiC/TiN has been confirmed by AFORS-HET. The J-V characteristics of the device are also significantly improved by the a-SiC by AFORS-HET. We have every reason to believe that a-SiC is a suitable ETL material with great application potential for BaSi2-based solar cells. We will further verify and optimize the ETL function of a-SiC in subsequent experiments to achieve device performance comparable to the simulation results.
Sputtered a-SiC has a band gap of 2.0 eV and a small qχ of 3.5 eV close to that of BaSi2, confirming the passivation effect on BaSi2. Thus a-SiC can be an ideal choice of electron transport layer (ETL) inserted between n-BaSi2/TiN. We chose p+-BaSi2 as the hole transport layer to solve the problem of the band offset between the BaSi2-based pn junction. The role of a-SiC as an ETL in p+-BaSi2/n-BaSi2/a-SiC/TiN has been confirmed by AFORS-HET. The J-V characteristics of the device are also significantly improved by the a-SiC by AFORS-HET. We have every reason to believe that a-SiC is a suitable ETL material with great application potential for BaSi2-based solar cells. We will further verify and optimize the ETL function of a-SiC in subsequent experiments to achieve device performance comparable to the simulation results.