[15p-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

△ [15p-D511-2] Relationship between Dislocation and Wire Cross-sectional Shape in Si Wire Formation by Anodization

〇(B)Miyuki Kochi¹, Ayaho Midori¹, Toshiaki Suzuki¹, Masaaki Niwa¹, Mitsuya Motohashi¹ (1.Tokyo Denki Univ.)

Keywords:silicon, anodization, wire

We have developed a method to fabricate Si wires by anodizing a single-crystal Si substrate with dislocations in HF solution. It was investigated that the relationship between the shape of dislocations and the cross-sectional shape of the wire. The pen pressure during groove formation and anodization time were varied. These shapes were observed by FE-SEM. As a result, it was found that the cross-sectional shape of the wire can be controlled by pen pressure.It was also confirmed that the cross-sectional shape strongly depends on the shape of dislocations.