2023年第70回応用物理学会春季学術講演会

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一般セッション(口頭講演)

21 合同セッションK「ワイドギャップ酸化物半導体材料・デバイス」 » 21.1 合同セッションK 「ワイドギャップ酸化物半導体材料・デバイス」

[15p-E102-1~17] 21.1 合同セッションK 「ワイドギャップ酸化物半導体材料・デバイス」

2023年3月15日(水) 13:30 〜 18:15 E102 (12号館)

古田 守(高知工科大)、井手 啓介(東工大)、後藤 健(農工大)

17:30 〜 17:45

[15p-E102-15] Killer Defects Responsible for Leakage Current in HVPE (001) β-Ga2O3 SBD Observed by Emission Microscopy and Synchrotron X-ray Topography

〇(D)Sayleap Sdoeung1、Kohei Sasaki2、Akito Kuramata2、Makoto Kasu1 (1.Saga Univ.、2.Novel Crystal Technology)

キーワード:Reverse leakage current, Killer defect, Schottky barrier diode

β-gallium oxide (β-Ga2O3) is a promising material for power device application owing to large bandgap (4.8 eV) and electric field (8 MV/cm). The availability of its high-quality substrate has accelerated the development of vertical β-Ga2O3- based power devices; for instance, Schottky barrier diodes (SBDs). However, killer defects degraded the performance of these devices. Therefore, we have identified the killer defect in halide vapor phase epitaxial (HVPE) (001) β-Ga2O3 SBDs that served as leakage path by mainly using ultra-high sensitive emission microscopy. As a result, we have found another type of killer defect contains (100) crack and dislocations along [100] direction below the surfaceserved as leakage current path of the HVPE (001) β-Ga2O3 SBDs.