[16a-B414-1~10] 17.3 層状物質

▼ [16a-B414-4] Deterministic synthesis of SnS and SnS₂ by chemical vapor deposition

〇(M1)Kazuki Koyama¹、Takamichi Miyazaki¹、Takeshi Odagawa¹、Chaoliang Zhang²、Shutaro Karube¹、Makoto Kohda^1,3,4,5 (1.Grad. Sch. of Eng., Tohoku Univ.、2.FRIS, Tohoku Univ.、3.CSIS, Tohoku Univ.、4.FRiD, Tohoku Univ.、5.QUARC, QST)

キーワード：Chemical vapor deposition, Tin sulfides

SnS is a promising material for spintronics because it has been experimentally demonstrated to exhibit ferroelectricity and theoretically predicted to exhibit a persistent spin helix state in a monolayer thickness. Large-scale and high-purity SnS crystals can be obtained by chemical vapor deposition using only Sn and S as precursors. However, few works have discussed the way to avoid the formation of another stable compound SnS₂. Here, we demonstrate that the concentration ratio between S and Sn determines the formation of SnS and SnS₂. This novel insight is expected to contribute to the production of high-quality SnS crystals.