[16a-B414-1~10] 17.3 層状物質

△ [16a-B414-7] Orientation Control of Reactive Sputtering Grown MoS₂

〇(D)Myeongok Kim^1,2、Yoshitaka Okada^1,2 (1.Eng. UTokyo、2.RCAST UTokyo)

キーワード：Reactive sputtering, MoS2, Orientation control

Orientation control of TMDC is one of the key challenges in their bottom-up growth research, and the mechanism is unique to each growth method. This research found that the orientation of MoS₂ can be controlled by tuning the substrate temperature and S/Mo ratio with reactive sputtering. In our reactive sputtering, S/Mo ratio were controlled by adjusting molybdenum’s sputter gun RF power and sulfur’s hot lip cell temperature. Lateral growth was favored when the substrate temperature was higher under high S/Mo ratio. Vertical MoS₂ fins were observed in the opposite condition. Vertical MoS₂ fins had larger area closer to the surface, and their thickness increased as the deposition proceeded. It can be attributed to more adsorption of adatoms to the fin surface and to the fin edge than to the substrate as the fin density increases.