[16a-B508-1~10] 12.2 Characterization and Materials Physics

[16a-B508-10] Physical properties of the molecular memristor candidate (Et-4BrT)[Ni(dmit)₂]₂

〇Yugo Oshima¹, Taishi Takenobu², Jyang Pu², Keisuke Ishiguro², Reizo Kato¹, Hiroshi M. Yamamoto³, Tetsuro Kusamoto³ (1.RIKEN, 2.Nagoya Univ., 3.IMS)

Keywords:memristor, Nonlinear conductivity

Memristors, which are passive devices proposed by L. O. Chua, are expected to be used in the next-generation memories or quantum computers since it does not require power to hold its information and can also be used as an analog type memory since its resistance depends on the electric charge. However, most of the reported cases for memristors have insufficient evidence, and the ideal memristor has not been experimentally demonstrated yet. Recently, we have discovered that one of the Bilayer-type molecular materials shows the expected I-V characteristics for memristor.