[16a-D519-1~14] CS.1 Code-sharing Session of 2.3 & 7.4 &7.5

[16a-D519-13] Reaction mechanism of atomic layer etching process of SiNx film using O₂-GCIB and acetylacetone

〇Masaya Takeuchi¹, Reki Fujiwara¹, Taisei Yamashita¹, Noriaki Toyoda¹ (1.Univ. of Hyogo)

Keywords:Gas cluster ion beam, Atomic layer etching, Silicon nitride

In this study, we demonstrate the proof-of-principle of atomic layer etching of SiNx film using O₂-GCIB and acetylacetone (acac). Also, we investigate mechanism of the reaction layer formation by acetylacetone and the reaction layer removal by O₂-GCIB irradiation. The surface conditions at each step were evaluated by XPS. The results show that the ALE proceed through the following process: oxidation of the SiNx film surface by O₂-GCIB irradiation, adsorption of acac vapor on the oxidized layer, and removal of the reaction layer by O₂-GCIB irradiation. The detail of this reaction process will be discussed quantitatively in this presentation.