[16p-B409-1~8] 3.12 半導体光デバイス（旧3.13）

▲ [16p-B409-1] [The 44th Paper Award Speech] Insights into the utilization of porous semiconductors for strain-relieved semiconductor layers

〇Shubhra Shweta Pasayat¹ (1.Univ. of Wisconsin-Madison)

キーワード：Micro-LEDs, Porous GaN, Display technologies

This talk will take a deep dive into the development and use of porous semiconductors for the fabrication of light emitters in the visible range. Methods used will be discussed along with new recent developments.