[16p-E102-1~12] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▲ [16p-E102-11] Improvement in Electrical Properties of Ga₂O₃ Schottky Barrier Diodes by Nitrogen Radical Treatment

〇Zhenwei Wang¹、Takahiro Kitada^1,2、Sandeep Kumar¹、Masataka Higashiwaki^1,2 (1.NICT、2.OMU)

キーワード：Gallium oxide, Schottky barrier diode, Nitrogen radical treatment

In this talk, we report improvement in electrical properties of Pt/Ga₂O₃ Schottky barrier diodes (SBDs) by applying nitrogen (N) radical treatments on β-Ga₂O₃ (010) and (100) surfaces. The N radical was generated by an RF-plasma cell in a molecular-beam epitaxy growth chamber. For SBDs with the N radical treatment, near-ideal and wafer-scale homogeneous current density–voltage (J–V) characteristics were observed. In contrast, scattered J–V curves with inferior ideality factors were measured for SBDs without N radical treatment. These results indicate that the N radical treatment is effective to remove Ga₂O₃ surface damage and improve Schottky interface properties, which should be useful for development on various types of Ga₂O₃ devices.