16:00 〜 18:00
▲ [16p-PB01-13] Surface Plasmon Excitation-Enhanced Organic Schottky Photodiode
キーワード：plasmonic, organic materials, Schottky barrier
The development of organic optical-sensing devices has been focused on the development of organic materials for near-infrared (NIR) photodetection. Due to factors including high nonradiative recombination rates for low-gap materials, the selection of materials for bulk-type organic photodetectors is constrained.[1] The plasmon-induced hot carriers produced at the metal/organic Schottky barrier interface have recently been used in sub-band gap photodetection studies.[2] In order to increase photocurrents in photo-electric conversion devices and to improve light harvesting, metallic nanostructure-induced plasmon has been employed.[3],[4] Here, we describe an organic Schottky barrier diode with an integrated plasmonic electrode enabling sub-bandgap photodetection for visible to NIR. The constructed plasmonic organic Schottky diode in Figure 1(A) is composed of ITO/silver nanoparticles (AgNPs)/spiro-TTB structure. Figures 1(B) shows a current density-voltage property of the fabricated device under NIR light illumination with and without AgNPs, respectively. As shown in this figure, the current density of the device with AgNPs was higher than that without AgNPs in both forward and reverse bias directions.