[17a-A403-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[17a-A403-10] Possible Use of Band-to-Band Tunneling in Soft-Error Reliability Prediction

〇(M2)Yoshitaka Kato^1,2, Daisuke Kobayashi², Kazuyuki Hirose^1,2 (1.UTokyo, 2.ISAS)

Keywords:soft error, single-event upset (SEU), silicon device

SRAM soft error reliability might be predicted without using radiation. This non-radiation prediction turns available if a proper bipolar gain can be estimated from the IV characteristics of a transistor of the SRAM cell, where the gain is a key parameter describing how strongly the transistor responds to a radiation strike. The present study will discuss the possible use of band-to-band tunneling in this gain estimation because of its similarity to the effect of radiation in terms of electron-hole pair generation.