09:30 〜 11:30
▲ [17a-PA02-7] Fabrication of Si Nanotube Arrays by Nanoimprint Lithography with Spacer Patterning
キーワード：Silicon, Nanotube
Top-down approaches provide vertical 1D structure with smooth surface, high crystal quality, and highly ordered arrangement, which make them suitable for electronic applications. Lithography, and self-assembled nanosphere bead templates have more recently been developed to fabricate Si nanotubes (SiNTs), but they require a complex manufacturing process, long processing time, or use of noble metals. On the other side, spacer patterning is known as one of the techniques used to overcome the resolution limit in the semiconductor industry.
Here, we propose the use of nanoimprint lithography (NIL) and spacer patterning technique atomic layer deposition (ALD) to fabricate SiNTs with high aspect ratio and nano-scale wall thickness.
Here, we propose the use of nanoimprint lithography (NIL) and spacer patterning technique atomic layer deposition (ALD) to fabricate SiNTs with high aspect ratio and nano-scale wall thickness.