Step electrical switching in VO<sub>2</sub>/hBN utilizing the domain confinement effect

Shingo Genchi; Shu Nakaharai; Takuya Iwasaki; Kenji Watanabe; Taniguchi Takashi; Yutaka Wakayama; Azusa Hattori; Hidekazu Tanaka

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[17p-A408-1~14] 6.3 Oxide electronics

Fri. Mar 17, 2023 1:00 PM - 4:45 PM A408 (Building No. 6)

Kei Takahashi(RIKEN), Azusa Hattori(Osaka Univ.)

3:30 PM - 3:45 PM

[17p-A408-10] Step electrical switching in VO₂/hBN utilizing the domain confinement effect

Shingo Genchi¹, Shu Nakaharai², Takuya Iwasaki², Kenji Watanabe², Taniguchi Takashi², Yutaka Wakayama², 〇Azusa Hattori¹, Hidekazu Tanaka¹ (1.SANKEN, Osaka Univ., 2.NIMS)

Keywords:VO2, Metal-insulator transition

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Presentation information

[17p-A408-1~14] 6.3 Oxide electronics

[17p-A408-10] Step electrical switching in VO2/hBN utilizing the domain confinement effect

[17p-A408-10] Step electrical switching in VO₂/hBN utilizing the domain confinement effect