[17p-B410-1~12] 13.8 Optical properties and light-emitting devices

[17p-B410-2] Change in Photoluminescence Properties and Crystal Structure of Lanthanoid Ion-Implanted GaN after High-Pressure Annealing

〇Shin Ito^1,2, Shin-ichiro Sato², Michal Bockowski³, Manato Deki⁴, Hirotaka Watanabe⁵, Shugo Nitta⁵, Yoshio Honda⁵, Hiroshi Amano^4,5, Kenichi Yoshida⁶, Hideki Minagawa⁶, Naoto Hagura¹ (1.Tokyo City Univ., 2.QST, 3.PAS, 4.Nagoya Univ. VBL, 5.Nagoya Univ. IMaSS, 6.ITC)

Keywords:Gallium nitride, Lanthanoid ion, high-pressure annealing

Showing stable and narrow-band photon emissions at room temperature, isolated lanthanoids in gallium nitride (GaN) are expected to be applied to single photon sources used for quantum communications. In this study, GaN epitaxial films implanted with neodymium (Nd) or praseodymium (Pr) ions are thermally annealed under ultra-high pressure, and their room temperature photoluminescence properties are investigated. Recovery from ion implantation damage is analyzed by XRD and Raman spectroscopy, and the relationship between the optical properties and the implantation damage is discussed.