Low-temperature growth of GaN by RF-MBE for realizing remote-epitaxy

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Sat. Mar 18, 2023 9:00 AM - 11:30 AM B401 (Building No. 2)

Shugo Nitta(Nagoya Univ.), Kohei Ueno(Univ. of Tokyo)

9:15 AM - 9:30 AM

〇Masami Nonogaki¹, Yukito Kato¹, Kohei Osamura¹, Ryoya Yokoi¹, Takahiro Maruyama¹, Shigeya Narituka¹ (1.Meijo Univ.)

Keywords:RF-MBE