[18a-B401-1~9] 15.4 III-V-group nitride crystals

[18a-B401-3] Pulsed laser deposition of GaN growth using a polarization-controlled pico-second laser

〇Kazuki Kodama¹, Mitsuhiko Miyachi², Osamu Oda¹, Masaru Hori¹, Daisuke Ueda¹ (1.Nagoya Univ., 2.alpha system)

Keywords:pulsed laser deposition, laser polarization, Gallium nitride

N+-GaN regrowth with high carrier concentration has been achieved by using pulsed laser deposition with a picosecond laser, obtaining low ohmic contact without post-annealing treatment. In this study, we have confirmed a remarkable increase in plume light and GaN growth rate by irradiating a liquid Ga source while changing the laser polarization plane using a half-wave plate.